BF998B 查看數據表（PDF） - Vishay Semiconductors
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BF998B Datasheet PDF : 9 Pages
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BF998/BF998R/BF998RW
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
Value
Unit
VDS
12
V
ID
30
mA
±IG1/G2SM
10
mA
±VG1S/G2S
7
V
Ptot
200
mW
TCh
150
°C
Tstg –65 to +150 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
RthChA
450
K/W
plated with 35mm Cu
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
ID = 10 mA,
–VG1S = –VG2S = 4 V
±IG1S = 10 mA,
VG2S = VDS = 0
±IG2S = 10 mA,
VG1S = VDS = 0
±VG1S = 5 V,
VG2S = VDS = 0
±VG2S = 5 V,
VG1S = VDS = 0
VDS = 8 V, VG1S = 0,
VG2S = 4 V
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
VDS = 8 V, VG2S = 4 V,
ID = 20 mA
VDS = 8 V, VG1S = 0,
ID = 20 mA
Type
Symbol
V(BR)DS
Min Typ Max Unit
12
V
±V(BR)G1SS 7
14 V
±V(BR)G2SS 7
14 V
±IG1SS
50 nA
±IG2SS
50 nA
BF998/BF998R/
IDSS
4
BF998RW
BF998A/BF998RA/
IDSS
4
BF998RAW
BF998B/BF998RB/
IDSS
9.5
BF998RBW
–VG1S(OFF)
18 mA
10.5 mA
18 mA
1.0 2.0 V
–VG2S(OFF)
0.6 1.0 V
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2 (9)
Document Number 85011
Rev. 4, 23-Jun-99
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