BF998B 查看數據表（PDF） - Vishay Semiconductors
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BF998B Datasheet PDF : 9 Pages
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BF998/BF998R/BF998RW
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
300
250
200
150
100
50
0
0
96 12159
20 40 60 80 100 120 140 160
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
20
VDS= 8V
16
12
5V 4V 3V
2V
1V
8
4
12817
0
–0.6
0
VG1S= –1V
–0.2 0.2 0.6 1.0 1.4
VG2S – Gate 2 Source Voltage ( V )
Figure 4. Drain Current vs. Gate 2 Source Voltage
30
VG2S= 4V
25
20
VG1S= 0.6V
0.4V
3.0
VDS=8V
2.5
VG2S=4V
f=1MHz
2.0
15
0.2V
1.5
10
0
5
0
0
12812
–0.2V
–0.4V
2
4
6
8
10
VDS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
1.0
0.5
0
–2 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5
12863
VG1S – Gate 1 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
20
VDS= 8V 6V
16
5V
4V
12
3V
2V
1V
8
4
0
12816
0
–0.8
VG2S=–1V
–0.4 0.0 0.4 0.8 1.2
VG1S – Gate 1 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
3.0
2.5
VG2S=4V
f=1MHz
2.0
1.5
1.0
0.5
0
2
12864
4
6
8
10
12
VDS – Drain Source Voltage ( V )
Figure 6. Output Capacitance vs. Drain Source Voltage
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4 (9)
Document Number 85011
Rev. 4, 23-Jun-99
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