BF999 查看數據表（PDF） - Siemens AG

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BF999

Silicon N Channel MOSFET Triode

Siemens AG 

BF 999

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Drain-source breakdown voltage

ID = 10 µA, – VGS = 4 V

Gate-source breakdown voltage

± IGS = 10 mA, VDS = 0

Gate-source leakage current

± VGS = 5 V, VDS = 0

Drain current

VDS = 10 V, VGS = 0

Gate-source pinch-off voltage

VDS = 10 V, ID = 20 µA

AC Characteristics

Forward transconductance

VDS = 10 V, ID = 10 mA, f = 1 kHz

Gate input capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Reverse transfer capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Output capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Power gain

(test circuit)

VDS = 10 V, ID = 10 mA, f = 200 MHz,

GG = 2 mS, GL = 0.5 mS

Noise figure (test circuit)

VDS = 10 V, ID = 10 mA, f = 200 MHz,

GG = 2 mS, GL = 0.5 mS

Symbol

Values

Unit

min. typ. max.

V(BR) DS

20

–

V ± (BR) GSS 6.5

–

± IGSS

–

–

IDSS

5

–

– VGS (p)

–

–

–

V

12

50 nA

18 mA

2.5 V

gfs

14

16

–

mS

Cgss

–

2.5 –

pF

Cdg

–

25 –

fF

Cdss

–

1

–

pF

Gp

–

25 –

dB

F

–

1

–

Semiconductor Group

2

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