BF999 查看數據表（PDF） - Siemens AG

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产品描述 (功能)

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BF999

Silicon N Channel MOSFET Triode

Siemens AG 

BF 999

Total power dissipation Ptot = f (TA)

Output characteristics ID = f (VDS)

Gate transconductance gfs = f (VGS)

VDS = 10 V, IDSS = 10 mA, f = 1 kHz

Drain current ID = f (VGS)

VDS = 10 V

Semiconductor Group

3

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