BFQ161 查看數據表（PDF） - Philips Electronics
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BFQ161 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN video transistor
Product specification
BFQ161
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
Rth j-a
Rth s-a
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
thermal resistance from soldering point to ambient
note 1
Note
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
VALUE
75
175
100
UNIT
K/W
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
hFE
Ccb
Cc
fT
collector-base breakdown voltage IC = 5 mA; IE = 0
20
collector-emitter breakdown voltage IC = 10 mA; IB = 0
10
emitter-base breakdown voltage IE = 0.1 mA; IC = 0
3
collector-emitter cut-off current
IB = 0; VCE = 10 V
−
DC current gain
IC = 300 mA; VCE = 5 V;
25
Tamb = 25 °C; see Fig.4
IC = 100 mA; VCE = 5 V;
40
Tamb = 25 °C; see Fig.4
collector-base capacitance
IC = 0; VCB = 5 V; f = 1 MHz;
−
see Fig.5
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz −
transition frequency
IC = 300 mA; VCE = 5 V; see Fig.6 1
−
−
V
−
−
V
−
−
V
−
100 µA
−
−
50
−
4.3 −
pF
6
−
pF
−
−
GHz
1997 Oct 02
3
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