BFP460(2004) 查看數據表（PDF） - Infineon Technologies

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BFP460
(Rev.:2004)

NPN Silicon RF Transistor*

Infineon Technologies 

BFP460

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 4.5

5.8

-V

Collector-base cutoff current

VCB = 5 V, IE = 0

Emitter-base cutoff current

VEB = 0,5 V, IC = 0

DC current gain

IC = 20 mA, VCE = 3 V, pulse measured

ICBO

IEBO

hFE

-

-

100 nA

-

-

1 µA

90 120 160 -

2

Jun-14-2004

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