BFG505W_X 查看數據表（PDF） - NXP Semiconductors.

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BFG505W_X

NPN 9 GHz wideband transistors

NXP Semiconductors. 

Philips Semiconductors

NPN 9 GHz wideband transistors

Product specification

BFG505W; BFG505W/X;

BFG505W/XR

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

APPLICATIONS

RF front end applications in the GHz

range, such as analog and digital

cellular telephones, cordless

telephones (CT2, CT3, PCN, DECT,

etc.), radar detectors, pagers,

satellite television tuners (SATV).

DESCRIPTION

NPN silicon planar epitaxial

transistors in 4-pin dual-emitter

SOT343N and SOT343R plastic

packages.

MARKING

TYPE NUMBER

BFG505W

BFG505W/X

BFG505W/XR

CODE

N0

N1

P0

PINNING

PIN

DESCRIPTION

BFG505W (see Fig.1)

1 collector

2 base

3 emitter

4 emitter

BFG505W/X (see Fig.1)

1 collector

2 emitter

3 base

4 emitter

BFG505W/XR (see Fig.2)

1 collector

2 emitter

3 base

4 emitter

page

4

3

1

Top view

2

MBK523

Fig.1 SOT343N.

alfpage

3

4

2

Top view

1

MSB842

Fig.2 SOT343R.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCES

IC

Ptot

hFE

Cre

fT

GUM

|s21|2

F

collector-base voltage open emitter

collector-emitter voltage RBE = 0

collector current (DC)

total power dissipation Ts ≤ 85 °C

DC current gain

feedback capacitance

transition frequency

maximum unilateral

power gain

insertion power gain

noise figure

IC = 5 mA; VCE = 6 V

IC = 0; VCB = 6 V; f = 1 MHz

IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C

IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C

IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C

IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C

Γs = Γopt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz

MIN. TYP. MAX. UNIT

−

−

20 V

−

−

15 V

−

−

18 mA

−

−

500 mW

60 120 250

−

0.2 −

pF

−

9

−

GHz

−

19 −

dB

12 −

dB

15 16 −

dB

−

1.9 −

dB

2000 Oct 30

2

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