BFG505W_XR 查看數據表（PDF） - NXP Semiconductors.
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BFG505W_XR Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X;
BFG505W/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
hFE
fT
Cc
Ce
Cre
GUM
|s21|2
F
PL1
ITO
collector-base breakdown voltage IC = 2.5 µA ; IE = 0
collector-emitter breakdown voltage IC = 10 µA; RBE = 0
emitter-base breakdown voltage IE = 2.5 µA; IC = 0
collector leakage current
VCB = 6 V; IE = 0
DC current gain
IC = 5 mA; VCE = 6 V see Fig.4
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C; see Fig.6
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz;
see Fig.5
maximum unilateral power gain;
note 1
insertion power gain
noise figure
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
IC = 5 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 900 MHz
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 2 GHz
output power at 1 dB gain
compression
third order intercept point
IC = 5 mA; VCE = 6 V; f = 900 MHz;
RL = 50 Ω; Tamb = 25 °C
note 2
MIN. TYP. MAX. UNIT
20 −
−
V
15 −
−
V
2.5 −
−
V
−
−
50 nA
60 120 250
−
9
−
GHz
−
0.3 −
pF
−
0.4 −
pF
−
0.2 −
pF
−
19 −
dB
−
12 −
dB
15 16 −
dB
−
1.2 1.7 dB
−
1.6 2.1 dB
−
1.9 −
dB
−
4
−
dBm
−
10 −
dBm
Notes
1.
2.
GUM is the maximum unilateral power gain, assuming s12 is zero. GUM
IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
=
10
log -(--1-----–------s---1---1---s-2---2)--1(---1-2----–------s---2--2-----2---)
dB.
fp = 900 MHz; fq = 902 MHz;
measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
2000 Oct 30
4
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