BFR520.215 查看數據表（PDF） - NXP Semiconductors.

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BFR520.215

NPN 9 GHz wideband transistor

NXP Semiconductors. 

BFR520

NPN 9 GHz wideband transistor

Rev. 4 — 13 September 2011

Product data sheet

1. Product profile

1.1 General description

The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.

1.2 Features and benefits

 High power gain

 Low noise figure

 High transition frequency

 Gold metallization ensures excellent reliability.

1.3 Applications

 RF front end wideband applications in the GHz range

 Analog and digital cellular telephones

 Cordless telephones (CT1, CT2, DECT, etc.)

 Radar detectors

 Pagers and satellite TV tuners (SATV)

 Repeater amplifiers in fiber-optic systems.

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

VCBO

VCES

collector-base voltage

collector-emitter

voltage

RBE = 0 

-

-

20

V

-

-

15

V

IC

collector current (DC)

-

-

70

mA

Ptot

total power dissipation up to Tsp = 97 C

[1] -

-

300 mW

hFE

DC current gain

IC = 20 mA; VCE = 6 V

60

120 250

Cre

feedback capacitance IC = ic = 0 A; VCB = 6 V;

-

0.4 -

pF

f = 1 MHz

fT

transition frequency IC = 20 mA; VCE = 6 V;

f = 1 GHz

-

9

-

GHz

GUM

maximum unilateral

power gain

IC = 20 mA; VCE = 6 V;

Tamb = 25 C

f = 900 MHz

-

15

-

dB

f = 2 GHz

-

9

-

dB

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