BFR520.215 查看數據表（PDF） - NXP Semiconductors.
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BFR520.215 Datasheet PDF : 14 Pages
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NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCES
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
RBE = 0
open collector
up to Tsp = 97 C
-
-
-
-
[1] -
65
-
[1] Tsp is the temperature at the soldering point of the collector tab.
Max Unit
20
V
15
V
2.5
V
70
mA
300
mW
150
C
175
C
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-s) thermal resistance from junction to soldering point
[1] Tsp is the temperature at the soldering point of the collector tab.
7. Characteristics
Typ Unit
[1] 260 K/W
Table 7. Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
ICBO
collector cut-off IE = 0 A; VCB = 6 V
current
-
-
50
nA
hFE
DC current gain IC = 20 mA; VCE = 6 V
Ce
emitter
IC = ic = 0 A; VEB = 0.5 V;
capacitance f = 1 MHz
60
120
250
-
1
-
pF
Cc
collector
IE = ie = 0 A; VCB = 6 V;
capacitance f = 1 MHz
-
0.5
-
pF
Cre
feedback
IC = 0 A; VCB = 6 V;
capacitance f = 1 MHz
-
0.4
-
pF
fT
transition
IC = 20 mA; VCE = 6 V;
frequency
f = 1 GHz
-
9
-
GHz
GUM
maximum
IC = 20 mA; VCE = 6 V;
[1]
unilateral power Tamb = 25 C
gain
f = 900 MHz
-
15
-
dB
f = 2 GHz
-
9
-
dB
s212 insertion power IC = 20 mA; VCE = 6 V;
13
14
-
dB
gain
Tamb = 25 C; f = 900 MHz
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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