BFR520.215 查看數據表（PDF） - NXP Semiconductors.
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BFR520.215 Datasheet PDF : 14 Pages
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NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
0.6
Cre
(pF)
0.4
0.2
mra704
12
fT
(GHz)
8
4
mra705
VCE = 6 V
3V
0
0
4
8
12
VCB (V)
Fig 3.
IC = 0 A; f = 1 MHz.
Feedback capacitance as a function of
collector-base voltage.
25
gain
(dB)
20
15
MSG
mra706
Gmax
GUM
10
5
0
0
10
20
30
IC (mA)
Fig 5.
VCE = 6 V; f = 900 MHz.
Gain as a function of collector current;
f = 900 MHz.
0
10−1
1
10 IC (mA) 102
Fig 4.
Tamb = 25 C; f = 1 GHz.
Transition frequency as a function of collector
current.
25
gain
(dB)
20
mra707
15
10
Gmax
GUM
5
0
0
10
20
30
IC (mA)
Fig 6.
VCE = 6 V; f = 2 GHz.
Gain as a function of collector current;
f = 2 GHz.
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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