BFR520.215 查看數據表（PDF） - NXP Semiconductors.

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BFR520.215

NPN 9 GHz wideband transistor

NXP Semiconductors. 

NXP Semiconductors

BFR520

NPN 9 GHz wideband transistor

135°

pot. unst.

region

+ 0.5

stability

circle

90°

+1

1.0

+2

45°

0.8

0.6

+ 0.2

0

180°

0.2

− 0.2

Fmin = 1.1 dB

+5

0.4

ΓOPT

0.2

0.5

1

2

5

F = 1.5 dB

0° 0

F = 2 dB

−5

F = 3 dB

−135° −0.5

−1

− 90°

Zo = 50 ; VCE = 6 V; IC = 5 mA; f = 900 MHz.

Fig 11. Noise circle figure; f = 900 MHz.

−2

− 45°

1.0

mra716

90°

1.0

+1

135° +0.5

+2

45°

0.8

F = 3 dB

+ 0.2

F = 2.5 dB

F = 2 dB

Fmin = 1. 9 dB

0

ΓMS

0.2

0.5 ΓOPT 1

2

180°

Gmax = 9.3 dB

G = 9 dB

0.6

0.4

+5

0.2

5

0° 0

− 0.2

−5

G = 8 dB

− 135°

G = 7 dB

− 0.5

−2

− 45°

−1

− 90°

1.0

mra717

Zo = 50 ; VCE = 6 V; IC = 5 mA; f = 2000 MHz.

Fig 12. Noise circle figure; f = 2000 MHz.

BFR520

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 13 September 2011

© NXP B.V. 2011. All rights reserved.

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