BGA2011 查看數據表（PDF） - Philips Electronics
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BGA2011 Datasheet PDF : 12 Pages
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Philips Semiconductors
900 MHz high linear low noise amplifier
Product specification
BGA2011
FEATURES
• Low current, low voltage
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
PINNING
PIN
1
2
3
4
5, 6
RF in
VC
VS
RF out
GND
DESCRIPTION
APPLICATIONS
• RF front end
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
handbook, halfpage
VS
6 54
VC
BIAS
CIRCUIT
12
Top view
3
MBL251
RF in
RF out
GND
Marking code:A5-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
IS
IC
|s21|2
PARAMETER
DC supply voltage
DC supply current
DC control current
insertion power gain
NF
noise figure
CONDITIONS
RF input AC coupled
VC = VS
in application circuit, see Fig.2;
f = 900 MHz
IS = 15 mA; f = 900 MHz
TYP.
3
15
0.11
19
MAX.
4.5
−
−
−
UNIT
V
mA
mA
dB
1.7
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
VS
VC
IS
IC
Ptot
Tstg
Tj
PARAMETER
DC supply voltage
voltage on control pin
supply current
control current
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
RF input AC coupled
forced by DC voltage on RF input
Ts ≤ 100 °C
MIN.
−
−
−
−
−
−65
−
MAX.
4.5
VS
30
0.25
135
+150
150
UNIT
V
V
mA
mA
mW
°C
°C
2000 Dec 04
2
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