BGD712C 查看數據表（PDF） - Philips Electronics
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BGD712C Datasheet PDF : 7 Pages
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Philips Semiconductors
BGD712C
750 MHz, 18 dB gain push-pull amplifier
5. Characteristics
Table 5: Characteristics
Bandwidth 40 MHz to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Gp
power gain
f = 45 MHz
f = 750 MHz
SL
slope cable equivalent
f = 45 MHz to 750 MHz
FL
flatness of frequency response f = 45 MHz to 100 MHz
f = 100 MHz to 700 MHz
f = 700 MHz to 750 MHz
S11
S22
ϕs21
CTB
input return losses
output return losses
phase response
composite triple beat
f = 45 MHz to 790 MHz
f = 45 MHz to 790 MHz
f = 50 MHz
112 channels flat;
Vo = 44 dBmV;
measured at 745.25 MHz
60 channels flat;
Vo = 44 dBmV
measured at 745.25 MHz
79 channels flat;
Vo = 44 dBmV
measured at 547.25 MHz
CSO
composite second-order
distortion
112 channels flat;
Vo = 44 dBmV;
measured at 746.5 MHz
60 channels flat;
Vo = 44 dBmV
measured at 746.5 MHz
79 channels flat;
Vo = 44 dBmV
measured at 548.5 MHz
NF
noise figure
f = 50 MHz
f = 750 MHz
Itot
total current
Min Typ
18.2 -
19.0 -
0.5
-
-
-
-
-
-
-
17
-
17
-
135 -
-
-
-
−67
-
-
-
-
-
−70
-
-
-
-
-
-
[1] 380
-
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
Max Unit
18.8 dB
20.0 dB
1.5
dB
±0.35 dB
±0.5 dB
±0.15 dB
-
dB
-
dB
225 deg
−62 dB
-
dB
−68 dB
−63 dB
-
dB
−68 dB
7
dB
7
dB
410 mA
BGD712C_1
Product data sheet
Rev. 01 — 2 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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