Preliminary
Broad Band High Gain LNA
BGA430
Features
• High gain |S21|2:
32 dB at 0.9 GHz,
28 dB at 2.15 GHz
• Low noise figure F50Ω: 2.2 dB at 0.9 GHz,
2.4 dB at 2.15 GHz
• Matched to 50Ω
• Reverse isolation > 40dB
• Small SOT363 package
• Typical supply voltage: 5V
• SIEGET®-25 technology
4
5
6
3
2
1
VPS05604
Applications
• LNB IF amplifiers
• CATV systems
• Set Top Boxes
• Buffer amplifiers for wide band applications
Description
4
3
The BGA430 is a broad band high gain
GND2
RFout
amplifier based upon Infineon Technologies’
Silicon Bipolar Technology B6HF. Housed
in a small SOT363 package this Silicon
5
2
Monolithic Microwave Integrated Circuit
GND1
GND1
(MMIC) requires very few external
components due to the integrated biasing
concept.
6
RFin
Bias
1
Vcc
Due to the advanced B6HF process the
BGA430 achieves an exceptional low noise
figure of 2.4 dB and a high gain of 28 dB at
2.15 GHz.
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BGA430
Package
SOT363
Marking
PHs
Chip
T0509
Preliminary data sheet
4
2002-05-03