BGA2717 查看數據表（PDF） - Philips Electronics
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BGA2717 Datasheet PDF : 14 Pages
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Philips Semiconductors
BGA2717
MMIC wideband amplifier
6. Thermal characteristics
Table 6:
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Ptot = 200 mW;
Tsp ≤ 90 °C
Typ
Unit
300
K/W
7. Characteristics
9397 750 13293
Product data sheet
Table 7: Characteristics
VS = 5 V; IS = 8 mA; Tj = 25 °C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
IS
s212
supply current
insertion power f = 100 MHz
gain
f = 1 GHz
6
8
10
18
18.6 20
23
23.9 25
f = 1.8 GHz
24
25
27
f = 2.2 GHz
24
25.1 27
f = 2.6 GHz
22
24
26
f = 3 GHz
20
22.1 24
s112
input return
losses
f = 1 GHz
f = 2.2 GHz
15
19
-
8
9.4
-
s222
output return
losses
f = 1 GHz
f = 2.2 GHz
8
10
-
5
6.8
-
s122 isolation
f = 1.6 GHz
f = 2.2 GHz
54
55
-
38
39
-
NF
noise figure
f = 1 GHz
-
2.3
2.5
f = 2.2 GHz
-
2.9
3.1
B
bandwidth
at s212 −3 dB below flat
3
3.2
-
gain at 1 GHz
K
stability factor f = 1 GHz
-
13
-
f = 2.2 GHz
-
1.7
-
PL(sat)
saturated load f = 1 GHz
power
f = 2.2 GHz
0
1.4
-
−1
+0.1 -
PL(1dB) load power
at 1 dB gain compression;
−4
f = 1 GHz
−2.6 -
at 1 dB gain compression;
−5
f = 2.2 GHz
−3.1 -
IM2
second order at PD = −40 dBm;
intermodulation f0 = 1 GHz
product
36
38
-
IP3in
input, third
f = 1 GHz
order intercept f = 2.2 GHz
point
−15
−13.9 -
−20
−18.8 -
IP3out
output, third f = 1 GHz
order intercept f = 2.2 GHz
point
9
10
-
4
6.3
-
Unit
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBc
dBm
dBm
dBm
dBm
Rev. 02 — 24 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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