BGA2776 查看數據表（PDF） - NXP Semiconductors.
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BGA2776 Datasheet PDF : 10 Pages
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NXP Semiconductors
MMIC wideband amplifier
Product specification
BGA2776
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VS
IS
Ptot
Tstg
Tj
PD
PARAMETER
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
CONDITIONS
RF input AC coupled
Ts ≤ 80 °C
MIN.
−
−
−
−65
−
−
MAX.
6
34
200
+150
150
10
UNIT
V
mA
mW
°C
°C
dBm
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
solder point
CONDITIONS
Ptot = 200 mW; Ts ≤ 80 °C
VALUE UNIT
300 K/W
CHARACTERISTICS
VS = 5 V; IS = 24.4 mA; f = 1 GHz; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
IS
s212
RL IN
RL OUT
NF
BW
PL(sat)
PL 1 dB
IP3(in)
IP3(out)
supply current
insertion power gain
return losses input
return losses output
noise figure
bandwidth
saturated load power
load power
input intercept point
output intercept point
19
f = 1 GHz
−
f = 2 GHz
−
f = 1 GHz
−
f = 2 GHz
−
f = 1 GHz
−
f = 2 GHz
−
f = 1 GHz
−
f = 2 GHz
−
at s212 −3 dB below flat gain at 1 GHz −
f = 1 GHz
−
f = 2 GHz
−
at 1 dB gain compression; f = 1 GHz −
at 1 dB gain compression; f = 2 GHz −
f = 1 GHz
−
f = 2 GHz
−
f = 1 GHz
−
f = 2 GHz
−
TYP.
24.4
23.2
23.2
9
7
17
9
4.9
5.3
2.8
10.5
8.1
7.2
6
−4.6
−8.8
18.6
14.4
MAX.
34
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
mA
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Rev. 04 – 29 August 2007
3 of 10
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