BIC702C 查看數據表（PDF） - Hitachi -> Renesas Electronics

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BIC702C

Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Hitachi -> Renesas Electronics 

BIC702C

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate1 to source voltage

Symbol

VDS

VG1S

Gate2 to source voltage

VG2S

Drain current

ID

Channel power dissipation

Pch

Channel temperature

Tch

Storage temperature

Tstg

Ratings

Unit

6

V

+6

V

–0

+6

V

–0

30

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Drain to source breakdown V(BR)DSS 6

—

voltage

Gate1 to source breakdown V(BR)G1SS +6

—

voltage

Gate2 to source breakdown V(BR)G2SS +6

—

voltage

Gate2 to source cutoff current IG2SS

—

—

Gate2 to source cutoff voltage VG2S(off)

0.5

0.7

Drain current

I D(op)

10

13

Forward transfer admittance |yfs|

24

29

Input capacitance

c iss

1.6

2.0

Output capacitance

c oss

0.7

1.1

Reverse transfer capacitance crss

—

0.02

Power gain

PG1

24

28.5

Noise figure

Power gain

NF1

—

1.0

PG2

18

23

Noise figure

NF2

—

1.6

Max

—

—

—

+100

1.0

16

34

2.3

1.5

0.05

—

1.5

—

2.2

Unit

V

V

Test Conditions

ID = 200µA

VG2S = 0,VG1 = open

IG1 =+10µA, VG2S = VDS = 0

V

IG2 = +10µA, VG1S = VDS = 0

nA

VG2S = +5V, VG1S = VDS = 0

V

VDS = 5V, ID = 100µA

VG1 = open

mA

VDS = 5V , VG2S = 4V

VG1 = open

mS

VDS = 5V, ID = 13mA

VG2S =4V, f = 1kHz

pF

VDS = 5V, VG2S =4V

pF

VG1 = open

pF

f = 1MHz

dB

VDS = 5V, VG2S =4V

VG1 = open

dB

f = 200MHz

dB

VDS = 5V, VG2S =4V

VG1 = open

dB

f = 900MHz

2

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