BLF522 查看數據表（PDF） - Philips Electronics
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BLF522 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF power MOS transistor
Product specification
BLF522
FEATURES
PIN CONFIGURATION
• High power gain
• Easy power control
• Gold metallization
halfpage
• Good thermal stability
• Withstands full load mismatch
1
2
• Designed for broadband operation.
3
4
DESCRIPTION
5
6
d
g
MBB072 s
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PIN
DESCRIPTION
1 source
2 source
3 gate
4 drain
5 source
6 source
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source class-B circuit.
MODE OF OPERATION
f
VDS
(MHz)
(V)
PL
(W)
GP
(dB)
ηD
(%)
CW, class-B
500
12.5
5
> 10
> 50
September 1992
2
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