BLF522 查看數據表（PDF） - Philips Electronics
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BLF522 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF power MOS transistor
Product specification
BLF522
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
±VGS
ID
Ptot
Tstg
Ti
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting
base
thermal resistance from mounting base to
heatsink
Tmb = 25 °C; Ptot = 20 W
Tmb = 25 °C; Ptot = 20 W
MIN.
−
−
−
−
−65
−
MAX. UNIT
40
V
20
V
1.8
A
20
W
150 °C
200 °C
THERMAL
RESISTANCE
8.8 K/W
0.4 K/W
handbook, ha5lfpage
ID
(A)
(1)
1
MRA990
(2)
0.1
1
10
100
VDS (V)
(1) Current in this area may be limited by RDS(on).
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
handbPootok,t 3ha5lfpage
(W)
30
MRA427
25
(2)
20
(1)
15
10
5
0
0
20 40 60 80 100 120
Th (oC)
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.3 Power/temperature derating curves.
September 1992
3
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