BLF522 查看數據表（PDF） - Philips Electronics
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BLF522 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF power MOS transistor
Product specification
BLF522
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
IDSS
IGSS
VGS(th)
gfs
RDS(on)
IDSX
Cis
Cos
Crs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
VGS = 0; ID = 5 mA
VGS = 0; VDS = 12.5 V
±VGS = 20 V; VDS = 0
ID = 50 mA; VDS = 10 V
ID = 0.7 A; VDS = 10 V
ID = 0.7 A; VGS = 15 V
VGS = 15 V; VDS = 10 V
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
VGS = 0; VDS = 12.5 V; f = 1 MHz
MIN. TYP. MAX. UNIT
40 −
−
V
−
−
0.5 mA
−
−
1
µA
2
−
4.5 V
200 270 −
mS
−
1.8 2.7 Ω
−
2.3 −
A
−
14 −
pF
−
17 −
pF
−
3
−
pF
handbook,2h5alfpage
T.C.
(mV/K)
15
MRA254
3
handbook, halfpage
ID
(A)
2
MRA249
5
1
−5
10
102
103
104
ID(mA)
VDS = 10 V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
0
0
4
8
12
16
20
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4
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