BLF522 查看數據表（PDF） - Philips Electronics
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BLF522 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF power MOS transistor
Product specification
BLF522
handbook, h5alfpage
RDSon
(Ω)
4
MRA253
3
2
1
0
0
50
100 Tj (oC) 150
ID = 0.7 A; VGS = 15 V;
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
handbook, 5h0alfpage
C
(pF)
40
MRA246
30
Cos
20
Cis
10
00
4
8
12
16
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
handbook, 1h0alfpage
Crs
(pF)
8
MRA256
6
4
2
0
0
4
8
12
16
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
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