BLF522 查看數據表（PDF） - Philips Electronics
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BLF522 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF power MOS transistor
Product specification
BLF522
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified.
RF performance in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
PL
(mA)
(W)
Gp
(dB)
ηD
(%)
CW, class-B
500
12.5
50
5
> 10
> 50
typ. 11
typ. 55
Ruggedness in class-B operation
The BLF522 is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions:
VDS = 15.5 V; f = 500 MHz at rated output power.
20
handbookG, hPalfpage
(dB)
16
12
8
MRA247
100
η
(%)
80
η
60
GP
40
4
20
0
0
3
4
5
6
7
PL (W)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 500 MHz.
Fig.9 Power gain and efficiency as functions of
load power, typical values.
10
handbook, halfpage
PL
(W)
8
MRA252
6
4
2
0
0
0.4
0.8
1.2
1.6
PIN (W)
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 500 MHz.
Fig.10 Load power as a function of input power,
typical values.
September 1992
6
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