BLF647P 查看數據表（PDF） - NXP Semiconductors.
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BLF647P Datasheet PDF : 14 Pages
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NXP Semiconductors
BLF647P
Broadband power LDMOS transistor
7.3.3 2-Tone CW
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VDS = 50 V; IDq = 700 mA; f1 = 1299.95 MHz;
f2 = 1300.05 MHz.
Fig 10. Power gain and drain efficiency as function of
average output power; typical values
VDS = 32 V; f1 = 1299.95 MHz; f2 = 1300.05 MHz.
(1) IDq = 100 mA
(2) IDq = 400 mA
(3) IDq = 700 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
Fig 11. Third order intermodulation distortion as a
function of average output power; typical
values
BLF647P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 April 2013
© NXP B.V. 2013. All rights reserved.
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