BLF861A 查看數據表（PDF） - Philips Electronics

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BLF861A

UHF power LDMOS transistor

Philips Electronics 

Philips Semiconductors

UHF power LDMOS transistor

Product specification

BLF861A

APPLICATION INFORMATION

RF performance in a common source 860 MHz test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W; unless otherwise specified.

MODE OF

OPERATION

f

VDS

IDQ

(MHz)

(V)

(A)

PL

Gp

ηD

dIm

∆Gp

(W)

(dB)

(%)

(dBc)

(dB)

CW; class-AB

860

32

2-tone; class-AB

f1 = 860

32

f1 = 860.1

PAL BG (TV); class-AB 860

32

(ch 69)

1

150

>13.5

>50

typ. 14.5

1

150 (PEP) >14

>40

1

> 150

>14

>40

typ. 170

(peak sync)

−

≤−25

−

≤1

−

note 1

Note

1. Sync compression: input sync ≥ 33%; output sync 27% measured in an 860 MHz test circuit.

Ruggedness in class-AB operation

The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the

following conditions: VDS = 32 V; f = 860 MHz at rated load power.

The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load

mismatch errors under the nominal power condition.

12

handbook, halfpage

zi

(Ω)

8

MCD871

xi

10

handbook, halfpage

ZL

(Ω)

5

MCD872

RL

4

ri

0

400

500

600

700

800

900

f (MHz)

0

XL

−5

400

500

600

700

800

900

f (MHz)

CW, class-AB operation; VDS = 32 V; IDQ = 1 A;

PL = 170 W (total device); Th = 25 °C.

Fig.3 Input impedance as a function of frequency

(series components); typical push-pull

values.

CW, class-AB operation; VDS = 32 V; IDQ = 1 A;

PL = 170 W (total device); Th = 25 °C.

Fig.4 Load impedance as a function of frequency

(series components); typical push-pull

values.

2001 Feb 09

4

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