BLF861A 查看數據表（PDF） - Advanced Semiconductor
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BLF861A Datasheet PDF : 1 Pages
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BLF861A
UHF POWER LDMOS TRANSISTOR
DESCRIPTION:
The ASI BLF861A ia a Silicon N-
channel enhancement mode lateral D-
MOS push-pull transistor.
FEATURES:
• Internal input-output matching
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID
18 A
VDS
65 V
VGS
±15 V
PDISS
318 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.55 °C/W
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVDSS
ID = 1.5 mA
IDSS
VDS = 32 V
VGS = 0 V
IDSX
VDS = 10 V
VGS = VGSth + 9 V
IGSS
VDS = 0 V
VGS = ±15 V
VGS(th)
ID = 150 mA
VDS = 10 V
RDS(on)
ID = 4.0 A
VGS = VGSth + 9 V
gfs
ID = 4.0 A
VDS = 10 V
Ciss
Coss
Crss
VDS = 32 V
VGS = 0 V
f = 1.0 MHz
Gp
VDS = 32 V
Pout = 150 W f = 860 MHz
ηD
MINIMUM
65
18
4.0
13.5
50
TYPICAL MAXIMUM
2.2
25
5.5
160
4.0
82
40
6.0
14.5
UNITS
V
µA
A
nA
V
mΩ
S
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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