BLF878 查看數據表（PDF） - NXP Semiconductors.
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BLF878 Datasheet PDF : 18 Pages
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NXP Semiconductors
7.1 Narrowband RF figures
7.1.1 CW
24
Gp
(dB)
22
Gp
20
ηD
18
BLF878
UHF power LDMOS transistor
001aai076 80
(2)
ηD
(%)
(1)
60
(2)
40
(1)
20
16
0
0
100
200
300
400
PL (W)
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 2. CW power gain and drain efficiency as a function of load power; typical values
BLF878_2
Product data sheet
Rev. 02 — 15 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 18
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