BLF878 查看數據表（PDF） - NXP Semiconductors.
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BLF878 Datasheet PDF : 18 Pages
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NXP Semiconductors
7.2 Broadband RF figures
7.2.1 2-Tone
22
Gp
(dB)
Gp
18
ηD
14
001aai081 80
(2)
ηD
(1)
(%)
60
(1)
(2)
40
0
IMD3
(dBc)
−20
−40
BLF878
UHF power LDMOS transistor
001aai082
(1)
(2)
10
20
400
500
600
700
800
900
f (MHz)
−60
400
500
600
700
800
900
f (MHz)
PL(AV) = 150 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 7. 2-Tone power gain and drain efficiency as a
function of frequency; typical values
PL(AV) = 150 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 8. 2-Tone third order intermodulation distortion
as a function of frequency; typical values
BLF878_2
Product data sheet
Rev. 02 — 15 June 2009
© NXP B.V. 2009. All rights reserved.
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