BLW29 查看數據表（PDF） - Philips Electronics
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BLW29 Datasheet PDF : 11 Pages
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Philips Semiconductors
VHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
IC(AV)
ICM
Prf
Tstg
Tj
Product specification
BLW29
max. 36 V
max. 18 V
max.
4V
max. 2,75 A
max.
8A
max. 53 W
−65 to + 150 °C
max. 200 °C
handbook,1h0alfpage
IC
(A)
1
MGP414
Th = 70 °C
Tmb = 25 °C
10−1
1
10
VCE (V)
102
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 15 W; Tmb = 77 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
60
handbook, halfpage
Prf
(W)
40
20
MGP415
short-time
operation
during mismatch
continuous
r.f. operation
derate by
0.3 W/K
continuous
d.c. operation
derate by 0.25 W/K
0
0
50
Th (°C)
100
Fig.3 R.F. power dissipation;
VCE ≤ 16,5 V; f ≥ 1 MHz.
Rth j-mb(dc)
=
Rth j-mb(rf)
=
Rth mb-h
=
3,7 K/W
3,05 K/W
0,45 K/W
August 1986
3
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