Philips Semiconductors
VHF power transistor
Product specification
BLW29
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
175
175
VCE (V)
13,5
12,5
PL (W)
15
15
PS (W)
< 1,5
typ. 1,34
Gp (dB)
> 10
typ. 10,5
IC (A)
< 1,85
typ. 1,8
η (%)
> 60
typ. 67
zi (Ω)
1,3 + j0,68
−
YL(mS)
180 − j54
−
handbook, full pagewidth
C1
50 Ω
L1
C2
C3a
L3 T.U.T.
C3b
R1 L2
L4
L7 C6
L5
C4
C5 R2
50 Ω
C7
L6
+VCC
MGP419
Fig.7 Test circuit; c.w. class-B.
List of components:
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = C7 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 1 nF ceramic capacitor
C5 = 100 nF polyester capacitor
L1 = 1⁄2 turn Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm
L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = L4 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L5 = 41⁄2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm
L7 = 2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = R2 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
August 1986
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