BLW29 查看數據表（PDF） - Philips Electronics
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BLW29 Datasheet PDF : 11 Pages
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Philips Semiconductors
VHF power transistor
Product specification
BLW29
handbook,3h0alfpage
PL
(W)
20
10
Th = 25 °C
MGP421
70 °C
0
0
VCE = 13,5 V;
− − − VCE = 12, 5 V
2
PS (W)
4
Fig.9 Typical values; f = 175 MHz.
.
25
handbook, halfpage
PLnom
(W)
(VSWR = 1)
20
15
MGP423
VSWR =
5
10
20
50
PS
PSnom
10
1
1.1
1.2 VCE 1.3
VCEnom
Th = 70 °C; Rth mb-h = 0,45 K/W; VCEnom = 13,5 V or 12,5 V;
PS = PSnom at VCEnom and VSWR = 1
Fig.11 R.F. SOAR (short-time operation during
mismatch); f = 175 MHz;
handbook,2h5alfpage
Gp
(dB)
20
Gp
15
η
10
5
MGP422
125
η
(%)
100
Th = 25 °C
75
Th = 70 °C
50
25 °C
70 °C
25
0
0
10
VCE = 13,5 V;
− − − VCE = 12, 5 V
0
20 PL (W) 30
Fig.10 Typical values; f = 175 MHz.
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply over-voltage
ratio.
OPERATING NOTE
Below 70 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
August 1986
8
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