BLW34 查看數據表（PDF） - Philips Electronics
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BLW34 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF linear power transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 8 mA
open base; IC = 60 mA
Emitter-base breakdown voltage
open collector; IE = 4 mA
Collector cut-off current
VBE = 0; VCE = 30 V
VBE = 0; VCE = 30 V; Tj = 175 °C
D.C. current gain
IC = 600 mA; VCE = 25 V
IC = 600 mA; VCE = 25 V; Tj = 175 °C
Collector-emitter saturation voltage (1)
IC = 1,2 A; IB = 0,12 A
Transition frequency at f = 500 MHz (2)
−IE = 0,6 A; VCB = 25 V
−IE = 1,2 A; VCB = 25 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Feedback capacitance at f = 1 MHz
IC = 40 mA; VCE = 25 V
Collector-stud capacitance
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
Product specification
BLW34
V(BR)CES
V(BR)CEO
V(BR)EBO
ICES
ICES
hFE
hFE
VCEsat
fT
fT
Cc
Cre
Ccs
>
50 V
>
30 V
>
4V
<
2,0 mA
<
5,0 mA
>
20
typ. 40
< 120
typ. 450 mV
typ. 3,3 GHz
typ. 3,0 GHz
typ. 13,5 pF
typ. 8,4 pF
typ. 1,2 pF
August 1986
5
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