Philips Semiconductors
UHF linear power transistor
Product specification
BLW34
APPLICATION INFORMATION
fvision (MHz)
860
860
860
VCE (V)
25
25
25
IC (mA)
600
600
600
Th (°C)
70
70
25
dim (dB) (1)
−60
−60
−60
Po sync (W) (1)
>
1,8
typ. 1,9
typ. 2,15
Gp (dB)
>
9
typ. 10,2
typ. 10,2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
handbook, full pagewidth
50 Ω
L1
C1
L2
C2 L3
T.U.T.
L6
C3 C4
L4
L5
C5
L7
C6
50 Ω
C7 C8 C9
C10 C11 C12 C13
+VBB
+VCC
Fig.8 Test circuit at fvision = 860 MHz.
MGP460
List of components:
C1 = C5 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C2 = C6 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 13,5 mm and 46 mm
respectively from transistor edge
C3 = C4 = 2 pF multilayer ceramic chip capacitor (ATC 100A-2RO-C-PX-50)
C7 = C10 = 1 nF chip capacitor
C8 = 100 nF polyester capacitor
C9 = C12 = 470 nF polyester capacitor
C11 = 10 nF polyester capacitor
C13 = 3,3 µF/40 V solid aluminium electrolytic capacitor
L1 = stripline (9,2 mm × 7,0 mm)
L2 = stripline (14,2 mm × 7,0 mm)
L3 = micro choke 0,47 µH (cat. no. 4322 057 04770)
L4 = stripline (see Fig.9 printed-circuit board layout)
L5 = 34 mm straight Cu wire (1,0 mm); height above print 3,3 mm
L6 = stripline (41,0 mm × 7,0 mm)
L7 = stripline (8,7 mm × 7,0 mm)
L1; L2; L4; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric
(εr = 2,74); thickness 1/16".
Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10.
August 1986
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