BLW81 查看數據表（PDF） - Philips Electronics
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BLW81 Datasheet PDF : 11 Pages
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Philips Semiconductors
UHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
The transistor is housed in a 1⁄4"
capstan envelope with a ceramic cap.
Product specification
BLW81
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
f
PL
Gp
η
V
MHz
W
dB
%
c.w.
12,5
470
10
> 6,0 > 60
c.w.
12,5
175
10
typ. 13,5 typ. 60
zi
Ω
1,3 + j2,5
1,2 − j0,6
YL
mS
150 − j66
140 − j80
PIN CONFIGURATION
handbook, halfpage
4
1
3
PINNING - SOT122A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
2
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2
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