BLW81 查看數據表（PDF） - Philips Electronics
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BLW81 Datasheet PDF : 11 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BLW81
30
handbook, halfpage
PL
(W)
20
f = 470 MHz
typical values
MGP580
VCC = 12.5 V
VCC = 13.5 V
Th = 25 °C
10
70 °C
10
handbook, halfpage
Gp
(dB)
f = 470 MHz
Th = 25 °C
typical values
5
MGP581
VCC = 12.5 V 100
VCC = 13.5 V
η
(%)
η
50
Gp
0
0
2.5
PS (W)
5
Fig.9
15
handbook, halfpage
PLnom
(W)
VSWR = 1
13
11
9
1
MGP582
VSWR =
2.25
5
10
50
PS
PSnom
1.1
1.2 VCC 1.3
VCCnom
Fig.11
March 1993
0
0
0
10
20 PL (W) 30
Fig.10
Measuring conditions for R.F. SOAR
f = 470 MHz
Th = 70 °C
Rth mb-h = 0,6 K/W
VCCnom = 12,5 V or 13,5 V
PS = PSnom at VCCnom and VSWR = 1 measured in the
circuit of Fig.7.
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio, with VSWR as
parameter.
The graph applies to the situation in which the drive
(PS/PSnom ) increases linearly with supply over-voltage
ratio.
8
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