BR34E02NUX-3R 查看數據表（PDF） - ROHM Semiconductor
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BR34E02NUX-3R Datasheet PDF : 33 Pages
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Datasheet
Serial EEPROM Series Standard EEPROM
Plug & Play EEPROM
BR34E02-3
General Description
BR34E02-3 is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
Features
Packages W(Typ) x D(Typ) x H(Max)
256×8 bit Architecture Serial EEPROM
Wide Operating Voltage Range: 1.7V to 5.5V
Two-Wire Serial Interface
Self-Timed Erase and Write Cycle
Page Write Function (16byte)
Write Protect Mode
¾ Settable Reversible Write Protect Function : 00h-7Fh
¾ Write Protect 1 (Onetime Rom)
: 00h-7Fh
¾ Write Protect 2 (Hardwire WP PIN)
: 00h-FFh
Low Power consumption
¾ Write
(at 1.7V) :
0.4mA (typ)
¾ Read
(at 1.7V) :
0.1mA (typ)
¾ Standby (at 1.7V) :
0.1µA (typ)
Prevention of Write Mistake
¾ Write Protect Feature (WP pin)
¾ Prevention of Write Mistake at Low Voltage
High Reliability Fine Pattern CMOS Technology
More than 1 million write cycles
More than 40 years data retention
Noise Reduction Filtered Inputs in SCL / SDA
Initial delivery state FFh
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature
Topr
Input Voltage / Output
Voltage (A0)
-
Input Voltage / Output
Voltage (others)
-
Rating
-0.3 to +6.5
330 (TSSOP-B8)
300 (VSON008X2030)
-65 to +125
-40 to +85
-0.3 to 10.0
-0.3 to VCC+1.0
Unit
V
mW
℃
℃
V
Remark
Derate by 3.3mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
V
Memory Cell Characteristics (Ta=25℃, VCC=1.7V to 5.5V)
Parameter
Limit
Min
Typ
Max
Write / Erase Cycle (1)
1,000,000
-
-
Data Retention(1)
40
-
-
(1) Not 100% TESTED
Unit
Times
Years
○Product structure：Silicon monolithic integrated circuit
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©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･14･001
○This product has no designed protection against radioactive rays
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TSZ02201-0R2R0G100520-1-2
25.Feb.2013 Rev.002
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