BR34E02FVT-3R 查看數據表（PDF） - ROHM Semiconductor
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BR34E02FVT-3R Datasheet PDF : 33 Pages
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BR34E02-3
Datasheet
Recommended Operating Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
1.7 to 5.5
V
Input Voltage
VIN
0 to VCC
V
DC Characteristics (Unless otherwise specified Ta=-40℃ to +85℃, VCC =1.7V to 5.5V)
Parameter
Limit
Symbol
Unit
Min Typ Max
Test Conditions
Input High Voltage
VIH 0.7 VCC - Vcc+1.0 V
Input Low Voltage
Output Low Voltage 1
VIL
VOL1
-0.3
-
- 0.3 VCC V
-
0.4
V IOL=2.1mA, 2.5V≦VCC≦5.5V(SDA)
Output Low Voltage 2
VOL2
-
-
0.2
V IOL=0.7mA, 1.7V≦VCC＜2.5V(SDA)
Input Leakage Current 1
ILI1
-1
-
1
µA VIN=0V to VCC (A0, A1, A2, SCL)
Input Leakage Current 2
ILI2
-1
-
15
µA VIN=0V to VCC (WP)
Input Leakage Current 3
ILI3
-1
-
20
µA VIN=VHV(A0)
Output Leakage Current
Supply Current (Write)
Supply Current (Read)
Standby Current
A0 HV Voltage
ILO
-1
-
1
µA VOUT=0V to VCC
VCC =5.5V, fSCL=400kHz, tWR=5ms
ICC1
-
-
2.0
mA
Byte Write
Page Write
Write Protect
VCC =5.5V, fSCL=400kHz
ICC2
-
-
0.5
mA
Random Read
Current Read
Sequential Read
ISB
-
-
2.0
µA
VCC =5.5V, SDA, SCL= VCC
A0, A1, A2=GND, WP=GND
VHV
7
-
10
V VHV-VCC≧4.8V
AC Characteristics (Unless otherwise specified Ta=-40℃ to +85℃, VCC =1.7V to 5.5V)
Parameter
Limit
Symbol
Unit
Min Typ Max
Clock Frequency
fSCL
-
-
400 kHz
Data Clock High Period
tHIGH
0.6
-
-
µs
Data Clock Low Period
SDA and SCL Rise Time( 1)
SDA and SCL Fall Time(1)
tLOW
1.2
-
-
µs
tR
-
-
0.3
µs
tF
-
-
0.3
µs
Start Condition Hold Time
tHD:STA
0.6
-
-
µs
Start Condition Setup Time
tSU:STA
0.6
-
-
µs
Input Data Hold Time
tHD:DAT
0
-
-
ns
Input Data Setup Time
tSU:DAT
100
-
-
ns
Output Data Delay Time
tPD
0.1
-
0.9
µs
Output Data Hold Time
tDH
0.1
-
-
µs
Stop Condition Setup Time
tSU:STO
0.6
-
-
µs
Bus Free Time
tBUF
1.2
-
-
µs
Write Cycle Time
Noise Spike Width
(SDA and SCL)
WP Hold Time
tWR
-
tI
-
tHD:WP
0
-
5
ms
-
0.1
µs
-
-
µs
WP Setup Time
tSU:WP
0.1
-
-
µs
WP High Period
(1) Not 100% TESTED
tHIGH:WP
1.0
-
-
µs
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TSZ22111・15・001
2/30
TSZ02201-0R2R0G100520-1-2
25.Feb.2013 Rev.002
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