BR34E02NUX-WE2 查看數據表（PDF） - ROHM Semiconductor
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BR34E02NUX-WE2
ROHM Semiconductor
BR34E02NUX-WE2 Datasheet PDF : 20 Pages
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●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
-0.3～+6.5
V
Power Dissipation
Pd
330(BR34E02FVT-W) *1
300(BR34E02NUX-W) *2
mW
Storage Temperature
Tstg
-65～+125
℃
Operating Temperature
Topr
-40～+85
℃
Terminal Voltage (A0)
-
-0.3～10.0
V
Terminal Voltage (etcetera)
-
-0.3～VCC+0.3
V
* Reduce by 3.3mW(*1), 3.0 mW(*2)/°C over 25°C
●Recommended operating conditions
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
1.7～3.6
V
Input Voltage
ＶIN
0～VCC
V
●Memory cell characteristics（Ta=25℃, VCC=1.7V～3.6V）
Parameter
Specification
Unit
Min.
Typ.
Max.
Write / Erase Cycle *1 1,000,000
－
－
Cycles
Data Retention
*1
40
－
－
Years
*1:Not 100% TESTED
●Electrical characteristics - DC（Unless otherwise specified Ta=-40℃～+85℃, VCC=1.7V～3.6V）
Parameter
Specification
Symbol
Unit
Min. Typ. Max.
Test Condition
"H" Input Voltage
VIH1 0.7 VCC - Vcc+0.3 V
"L" Input Voltage
VIL1
-
"L" Output Voltage 1
VOL1 -0.3
"L" Output Voltage 2
VOL2
-
Input Leakage Current 1
ILI1
-1
Input Leakage Current 2
ILI2
-1
Input Leakage Current 3
ILI3
-1
Output Leakage Current
ILO
-1
ICC1
-
Operating Current
ICC2
-
Standby Current
ICC3
-
ISB
-
- 0.3 VCC V
-
0.4
V IOL=2.1mA，2.5V≦VCC≦3.6V（SDA）
-
0.2
V IOL=0.7mA，1.7V≦VCC＜2.5V（SDA）
-
1
μA VIN=0V～VCC（A0,A1,A2,SCL）
-
15
μA VIN=0V～VCC（WP）
-
20
μA VIN=VHV(A0)
-
1
μA VOUT=0V～VCC
VCC=1.7V,fSCL=100ｋHz，tWR=5ms
-
1.0
mA
Byte Write
Page Write
Write Protect
VCC =3.6V,fSCL=100ｋHz, tWR=5ms
-
3.0
mA
Byte Write
Page Write
Write Protect
VCC =3.6V,fSCL=100ｋHz
-
0.5
mA
Random Read
Current Read
Sequential Read
-
2.0
μA
VCC =3.6V,SDA,SCL= VCC
A0,A1,A2=GND,WP=GND
A0 HV Voltage
VHV
7
-
10
V VHV-Vcc≧4.8V
○Note: This IC is not designed to be radiation-resistant.
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