BRT12 查看數據表（PDF） - Siemens AG
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BRT12 Datasheet PDF : 6 Pages
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BRT 11, BRT 12, BRT 13
Characteristics
at Tj = 25 °C, unless otherwise specified.
Input Circuit
Parameter
Forward Voltage,
IF = 10 mA
Reverse current,
VR = 6 V
Thermal resistance 2)
junction - ambient
Symbol
VF
Values
Unit
min. typ. max.
- 1.1 1.35 V
IR
-
- 10 µA
RthJA
-
- 750 K/W
Output Circuit
Parameter
Critical rate of rise of off-state voltage
VD = 0.67 VDRM, Tj = 25 °C
VD = 0.67 VDRM, Tj = 80 °C
Critical rate of rise of voltage at current
commutnaictiaotnion
VD = 0.67 VDRM, Tj = 25 °C, di/dtcrq ≤ 15 A/ms
VD = 0.67 VDRM, Tj = 80 °C, di/dtcrq ≤ 15 A/ms
Critical rate of rise of on-state current
Pulse current
tpp ≤≤ 55 µµss,, ff == 110000 H, dz,itpd/idtpt/d≤t8≤A8/µAs/µs
On-state voltage,
IT = 300 mA
Off-state current
TC = 100 °C, VDRM = VDRM
Holding current,
VD = 10 V
Thermal resistance 2)
junction - ambient
Symbol
dv/dtcr
dv/dtcrq
Values
Unit
min. typ. max.
10 -
kV/µs
-
5
-
-
di/dtcr
Itp
10 -
5-
8
-
-
-
-
-
- A/µs
2A
VT
-
- 2.3 V
ID
- 0.5 100 µA
IH
- 80 500
RthJA
-
- 125 K/W
Semiconductor Group
3
12.96
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