BS123 查看數據表（PDF） - General Semiconductor

零件编号

产品描述 (功能)

生产厂家

BS123

DMOS Transistors (N-Channel)

General Semiconductor 

BS123

DMOS Transistors (N-Channel)

TO-92

.181 (4.6)

.142 (3.6)

FEATURES

♦ High input impedance

♦ Low gate threshold voltage

♦ Low drain-source ON resistance

♦ High-speed switching

♦ No minority carrier storage time

♦ CMOS logic compatible input

♦ No thermal runaway

♦ No secondary breakdown

max.∅ .022 (0.55)

.098 (2.5)

D

S

G

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage

VDGS

60

V

Gate-Source Voltage (pulsed)

VGS

±20

V

Drain Current (continuous) at Tamb1) = 25 °C, at TSB2) = 50 °C ID

1.1

A

Power Dissipation at Tamb1) = 25 °C, at TSB2) = 50 °C

Ptot

8301)

mW

Junction Temperature

Tj

150

°C

Storage Temperature Range

TS

–65 to +150

°C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).

4/98

Share Link: