BS123 查看數據表（PDF） - General Semiconductor

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BS123

DMOS Transistors (N-Channel)

General Semiconductor 

BS123

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Drain-Source Breakdown Voltage

at ID = 100 µA, VGS = 0 V

Gate-Body Leakage Current, Forward

at VGSF = 20 V, VDS = 0 V

Gate-Body Leakage Current, Reverse

at VGSR = 20 V, VDS = 0 V

Drain Cutoff Current

at VDS = 60 V, VGS = 0 V

Gate-Source Threshold Voltage

at VGS = VDS, ID = 250 µA

Drain-Source ON Resistance

at VGS = 10 V, ID = 600 mA

Capacitance

at VDS = 25 V, VGS = 0 V, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

Switching Times

at VGS = 10 V, VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

Thermal Resistance Junction to Ambient Air

Symbol

Min.

Typ.

Max.

Unit

V(BR)DSS

60

80

–

V

IGSSF

–

–

500

nA

IGSSR

–

–

500

nA

IDSS

–

–

250

µA

VGS(th)

1

1.5

3

V

RDS(on)

–

0.3

0.4

Ω

CiSS

–

COSS

–

CrSS

–

ton

–

toff

–

RthJA

–

350

–

pF

150

–

pF

35

–

pF

40

–

ns

100

–

ns

–

1501)

K/W

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).

Inverse Diode

Max. Forward Current (continuous)

at Tamb = 25 °C

Forward Voltage Drop (typ.)

at VGS = 0 V, IF = 1.1 A, Tj = 25 °C

Symbol

Value

Unit

IF

1.1

A

VF

1

V

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