BS616LV2019(2006) 查看數據表（PDF） - Brilliance Semiconductor

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BS616LV2019
(Rev.:2006)

Very Low Power CMOS SRAM 128K X 16 bit

Brilliance Semiconductor 

n Revision History

Revision No. History

1.2

Add Icc1 characteristic parameter

1.3

Change I-grade operation temperature range

- from –25OC to –40OC

BS616LV2019

Draft Date

Jan. 13, 2006

May. 25, 2006

Remark

R0201-BS616LV2019

11

Revision 1.3

May.

2006

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