BS616LV4016ACG70 查看數據表（PDF） - Brilliance Semiconductor

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BS616LV4016ACG70

Very Low Power/Voltage CMOS SRAM 256K X 16 bit

Brilliance Semiconductor 

BSI

„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )

SYMBOL

PARAMETER

TEST CONDITIONS

VDR

Vcc for Data Retention

CE ≧ Vcc - 0.2V

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

ICCDR (3)

tCDR

tR

Data Retention Current

Chip Deselect to Data

Retention Time

Operation Recovery Time

CE ≧ Vcc - 0.2V

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

See Retention Waveform

1. Vcc = 1.5V, TA = + 25OC

2. tRC = Read Cycle Time

3. IccDR(Max.) is 1.2uA at TA=70OC.

BS616LV4016

MIN. TYP. (1) MAX.

1.5

--

--

--

0.15

1.7

0

--

--

TRC (2)

--

--

UNITS

V

uA

ns

ns

„ LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )

Vcc

CE

Vcc

t CDR

VIH

Data Retention Mode

VDR ≥ 1.5V

CE ≥ Vcc - 0.2V

Vcc

tR

VIH

R0201-BS616LV4016

4

Revision 1.1

Jan. 2004

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