BS616LV8016 查看數據表（PDF） - Brilliance Semiconductor
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BS616LV8016 Datasheet PDF : 10 Pages
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n PIN DESCRIPTIONS
BS616LV8016
Name
A0-A18 Address Input
Function
These 19 address inputs select one of the 524,288 x 16 bit in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read form or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
Lower byte and upper byte data input/output control pins.
DQ0-DQ15 Data Input/Output
Ports
VCC
VSS
16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
n TRUTH TABLE
MODE
CE1 CE2 WE
OE
LB
UB
H
X
X
X
X
X
Chip De-selected
(Power Down)
X
L
X
X
X
X
X
X
X
X
H
H
L
H
H
H
L
X
Output Disabled
L
H
H
H
X
L
L
L
Read
L
H
H
L
H
L
L
H
L
L
Write
L
H
L
X
H
L
L
H
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
DQ0~DQ7 DQ8~DQ15 VCC CURRENT
High Z
High Z
ICCSB, ICCSB1
High Z
High Z
ICCSB, ICCSB1
High Z
High Z
ICCSB, ICCSB1
High Z
High Z
ICC
High Z
High Z
ICC
DOUT
DOUT
ICC
High Z
DOUT
ICC
DOUT
High Z
ICC
DIN
DIN
ICC
X
DIN
ICC
DIN
X
ICC
R0201-BS616LV8016
2
Revision 2.3
May.
2006
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