BS616LV8016 查看數據表（PDF） - Brilliance Semiconductor
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BS616LV8016 Datasheet PDF : 10 Pages
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n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
BS616LV8016
JEDEC
PARAMETER
NAME
PARANETER
NAME
tAVAX
tAVWL
tAVWH
tELWH
tBLWH
tWLWH
tWHAX
tWHAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tAS
tAW
tCW
tBW
tWP
tWR1
tWR2
tWHZ
tDW
tDH
tOHZ
tOW
DESCRIPTION
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
MIN. TYP. MAX.
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
MIN. TYP. MAX.
Write Cycle Time
55
--
--
70
--
--
Address Set up Time
0
--
--
0
--
--
Address Valid to End of Write
55
--
--
70
--
--
Chip Select to End of Write
55
--
--
70
--
--
Data Byte Control to End of Write (LB, UB) 25
--
--
30
--
--
Write Pulse Width
30
--
--
35
--
--
Write Recovery Time
(CE1, WE) 0
--
--
0
--
--
Write Recovery Time
(CE2) 0
--
--
0
--
--
Write to Output High Z
--
--
25
--
--
30
Data to Write Time Overlap
25
--
--
30
--
--
Data Hold from Write Time
0
--
--
0
--
--
Output Disable to Output in High Z
--
--
25
--
--
30
End of Write to Output Active
5
--
--
5
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
CE1
tCW(11)
(5)
tWR1(3)
CE2
LB, UB
WE
DOUT
DIN
R0201-BS616LV8016
(5)
tCW(11)
tBW
tWR2(3)
tAS
tOHZ(4,10)
tAW
tWP(2)
tDH
tDW
7
Revision 2.3
May.
2006
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