BS62LV256SCP70 查看數據表（PDF） - Brilliance Semiconductor

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BS62LV256SCP70

VeryLow Power CMOS SRAM 32K X 8 bit

Brilliance Semiconductor 

n Revision History

Revision No. History

2.4

Add Icc1 characteristic parameter

2.5

Change I-grade operation temperature range

- from –25OC to –40OC

2.6

Revised ICCSB1 sepc.

- from 1.0uA to 4.0uA for 5V C-grade

- from 2.0uA to 5.0uA for 5V I-grade

- from 0.2uA to 0.4uA for 3V C-grade

- from 0.4uA to 0.7uA for 3V I-grade

Revised ICCDR sepc.

- from 0.2uA to 0.4uA for C-grade

- from 0.4uA to 0.7uA for I-grade

BS62LV256

Draft Date

Jan. 13, 2006

May. 25, 2006

Sep. 05, 2006

Remark

R0201-BS62LV256

10

Revision 2.6

Sep.

2006

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