BS62LV256TIP70 查看數據表（PDF） - Brilliance Semiconductor
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BS62LV256TIP70 Datasheet PDF : 10 Pages
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n DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
NAME
PARAMETER
VCC
Power Supply
TEST CONDITIONS
VIL
Input Low Voltage
VIH
Input High Voltage
BS62LV256
MIN. TYP.(1) MAX. UNITS
2.4
--
5.5
V
-0.5(2)
--
0.8
V
2.2
--
VCC+0.3(3)
V
IIL
Input Leakage Current
VIN = 0V to VCC
ILO
Output Leakage Current CE= VIH, or OE = VIH,
VI/O = 0V to VCC
VOL
Output Low Voltage
VCC = Max, IOL = 0.5mA
--
--
1
uA
--
--
1
uA
--
--
0.4
V
VOH
Output High Voltage
VCC = Min, IOH = -0.5mA
2.4
--
--
V
ICC(5)
Operating Power Supply
Current
CE = VIL,
IDQ = 0mA, f = FMAX(4)
VCC=3.0V
--
VCC=5.0V
--
--
25
mA
--
40
ICC1
Operating Power Supply CE = VIL,
Current
IDQ = 0mA, f = 1MHz
VCC=3.0V
--
--
1
mA
VCC=5.0V
--
--
2
ICCSB
Standby Current – TTL
CE = VIH,
IDQ = 0mA
VCC=3.0V
--
VCC=5.0V
--
--
1.0
mA
--
2.0
ICCSB1(6)
Standby Current – CMOS CE≧VCC-0.2V,
VCC=3.0V
--
0.01
0.7
uA
VIN≧VCC-0.2V or VIN≦0.2V
VCC=5.0V
--
0.4
5.0
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. ICC (MAX.) is 20mA/35mA at VCC=3.0V/5.0V and TA=70OC.
6. ICCSB1(MAX.) is 0.4uA/4.0uA at VCC=3.0V/5.0V and TA=70OC.
n DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
ICCDR(3)
tCDR
tR
VCC for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
See Retention Waveform
1. VCC=1.5V, TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
3. ICCDR(Max.) is 0.4uA at TA=70OC.
n LOW VCC DATA RETENTION WAVEFORM (CE Controlled)
VCC
CE
VCC
tCDR
VIH
Data Retention Mode
VDR≧1.5V
CE≧VCC - 0.2V
MIN. TYP. (1) MAX. UNITS
1.5
--
--
V
--
0.01
0.7
uA
0
--
tRC (2)
--
--
ns
--
ns
VCC
tR
VIH
R0201-BS62LV256
3
Revision 2.6
Sep.
2006
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