BS62LV4005 查看數據表（PDF） - Brilliance Semiconductor

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BS62LV4005

Low Power/Voltage CMOS SRAM 512K X 8 bit

Brilliance Semiconductor 

BSI

BS62LV4005

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )

PARAMETER

NAME

VIL

VIH

IIL

IOL

VOL

VOH

ICC

PARAMETER

TEST CONDITIONS

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Vcc=5.0V

Vcc=5.0V

Vcc = Max, VIN = 0V to Vcc

Vcc = Max, CE = VIH, or OE = VIH,

VI/O = 0V to Vcc

Vcc = Max, IOL = 2mA

Vcc=5.0V

Vcc = Min, IOH = -1mA

Vcc=5.0V

Operating Power Supply

Current

CE = VIL, IDQ = 0mA, F = Fmax(3)

Vcc=5.0V

MIN. TYP. (1) MAX.

UNITS

-0.5

--

0.8

V

2.2

--

Vcc+0.3

V

--

--

1

uA

--

--

1

uA

--

--

0.4

V

2.4

--

--

V

--

--

45

mA

ICCSB

Standby Current-TTL

CE = VIH, IDQ = 0mA

Vcc=5.0V

--

--

2

mA

CE Њ Vcc-0.2V,

ICCSB1

Standby Current-CMOS

Vcc=5.0V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

--

1.5

15

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

„ DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )

SYMBOL

PARAMETER

TEST CONDITIONS

VDR

Vcc for Data Retention

CE Њ Vcc - 0.2V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

ICCDR

tCDR

tR

Data Retention Current

Chip Deselect to Data

Retention Time

Operation Recovery Time

CE Њ Vcc - 0.2V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

See Retention Waveform

MIN. TYP. (1) MAX.

1.5

--

--

--

0.1

1.5

0

--

--

TRC (2)

--

--

UNITS

V

uA

ns

ns

1. Vcc = 1.5V, TA = + 25OC

2. tRC = Read Cycle Time

„ LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )

Vcc

CE

Vcc

t CDR

VIH

Data Retention Mode

VDR ≥ 2.0V

CE ≥ Vcc - 0.2V

Vcc

tR

VIH

R0201-BS62LV4005

3

Revision 2.4

April 2002

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