BSC072N025SG(2006) 查看數據表（PDF） - Infineon Technologies

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BSC072N025SG
(Rev.:2006)

OptiMOS®2 Power-Transistor

Infineon Technologies 

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance,

junction - ambient

R thJC

R thJA

minimal footprint

6 cm2 cooling area2)

BSC072N025S G

min.

Values

typ.

Unit

max.

-

-

2.1 K/W

-

-

62

-

-

45

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V (BR)DSS V GS=0 V, I D=1 mA

25

V GS(th) V DS=V GS, I D=30 µA

1.2

I DSS

V DS=25 V, V GS=0 V,

T j=25 °C

-

V DS=25 V, V GS=0 V,

T j=125 °C

-

I GSS

V GS=20 V, V DS=0 V

-

R DS(on) V GS=4.5 V, I D=30 A

-

V GS=10 V, I D=40 A

-

RG

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=40 A

29

-

-V

1.6

2

0.1

1 µA

10

100

10

100 nA

8.7

10.9 mΩ

6.0

7.2

1.2

-Ω

58

-S

1)J-STD20 and JESD22

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

3) See figure 3

Rev. 0.94

page 2

2006-05-10

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