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零件编号
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BSC072N025SG(2006) 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
BSC072N025SG
(Rev.:2006)
OptiMOS®2 Power-Transistor
Infineon Technologies
BSC072N025SG Datasheet PDF : 10 Pages
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13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter:
T
j(start)
100
25 °C
100 °C
125 °C
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=25 A pulsed
parameter:
V
DD
12
BSC072N025S G
15 V
10
6V
24 V
8
10
6
4
2
1
0
1
10
100
1000
0
10
20
30
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
16 Gate charge waveforms
28
V
GS
Q
g
26
24
V
g s(th)
22
Q
g(th)
20
-60
-10
40
90
140
190
T
j
[°C]
Q
gs
Rev. 0.94
page 7
Q
sw
Q
gd
Q
gate
2006-05-10
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